where: E is the magnitude of the electric field applied to a material, v d is the magnitude of the electron drift velocity (in other words, the electron drift speed) caused by the electric field, and µ is the electron mobility. Should the silicon be doped at all or do you expect the maximum resistivity when dopants are added? 2. 4 0 obj • A pure semiconductor with no dopant impurities is termed intrinsic and the free carrier concentrations are very low. µn = 1350 cm2/V-s and It would never make even a good conducter, much less a super conductor. Both electron and hole mobilities are positive by definition. 0000040679 00000 n

endstream endobj 622 0 obj<>/Size 600/Type/XRef>>stream 0000003372 00000 n density of electrons and holes and their respective mobilities.

Calculate the Fermi energy and the temperature. 623 0 obj<>stream 8. (a) Calculate the resistivity at T = 300 K of intrinsic (i) silicon, (ii) germanium, and (iii) gallium arsenide. Calculate the hole density, the donor density and the Fermi energy relative to the intrinsic energy. 0000003419 00000 n

<>/Font<>/XObject<>/ProcSet[/PDF/Text/ImageB/ImageC/ImageI] >>/MediaBox[ 0 0 612 792] /Contents 4 0 R/Group<>/Tabs/S/StructParents 0>> Silicon wafers properties. Semiconductors • Intrinsic semiconductors – Electrical behavior is based on the electronic • Extrinsic semiconductors ... conduction in intrinsic silicon - after excitation. Essentials of Electrical and Computer Engineering | 1st Edition, Essentials of Electrical and Computer Engineering. (b) If rectangular semiconductor bars are fabricated using the materials in part (a), determine the resistance of each bar if its cross-sectional area is 85 μ m 2 and length is 200 μ m. Silicon, Si - the most common semiconductor, single crystal Si can be processed into wafers up to 300 mm in diameter. 9. b) What properties of the minority carrier density can you identify without actually solving the problem. 0000069016 00000 n *The resistivity of semiconductors depends strongly on the presence of impurities in the material, a fact which makes them useful in solid state electronics. 1 0 obj Calculate the intrinsic conductivity of Si at room temperature (300°K). 0000003759 00000 n Prove that the probability of occupying an energy level below the Fermi energy equals the probability that an energy level above the Fermi energy and equally far away from the Fermi energy is not occupied. 0000013853 00000 n the absorption coeficient, refractive index and extinction coeficient at 300 K are tabulated over the 0.25‐1.45 μm wavelength range at 0.01 μm intervals. 3 0 obj So even though the resistivity goes down dramatically with temp. Consider two silicon samples. The larger is the cross-section A the smaller is R, the higher is

0 (n i = 10 10, m n = 1400 cm 2 /V-sec and m p = 450 cm 2 V-sec.) intrinsic and the free carrier concentrations are very low. electrical resistivity equals the sum of thermal, impurity and deformation contributions • See Figure 18.8. Find an expression as well as the numeric value for the effective density of states, Nc*, taking into account both conduction bands, so that the usual expressions for the intrinsic carrier concentration and the intrinsic Fermi energy still hold, namely: Where the energy bandgap, Eg, equals Ec1 – Ev and Ev is the top of the valence band.

I don't know where you got this 10^(-3) value for the resistivity (which should be in ohms-m), it is more confusing when you don't use units. © 2003-2020 Chegg Inc. All rights reserved.

Wafers are thin (thickness depends on wafer diameter, but is typically less than 1 mm), circular slice of single-crystal semiconductor material cut from the ingot of single crystal semiconductor. Assume that. <<781F0A479E9DC246B05B78BDE974927C>]>>

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The specific resistance or resistivity , ρ = ρ 0 (1 + α T) where α = temperature coefficient of resistivity is positive for metals (copper) and is negative for semiconductor ( silicon). xref 0000000016 00000 n Silicon is doped with boron to a concentration of 4×1017 / . H�b``�```y� )�(- �jP�� ���yAy����~�n�P�K�E���M�������p2���k`O``�Y}�A���k�k�0�2ˁ4# ��� endstream endobj 45 0 obj 114 endobj 6 0 obj << /Type /Page /Parent 2 0 R /Resources << /Font << /F3 29 0 R /F7 35 0 R /F4 12 0 R /F9 13 0 R /F1 18 0 R /F2 17 0 R >> /ExtGState << /R16 43 0 R >> /ProcSet [ /PDF /Text ] >> /Contents [ 22 0 R 24 0 R 31 0 R 33 0 R 36 0 R 38 0 R 40 0 R 42 0 R ] /MediaBox [ 0 0 612 792 ] /CropBox [ 0 0 612 792 ] /Rotate 0 >> endobj 7 0 obj << /Type /Encoding /Differences [ 1 /P /R /O /E /T /I /S /space /o /f /G /e /comma /i /a /n /d /A /s /t /three /zero /K /r /p /u /c /colon ] >> endobj 8 0 obj << /Filter /FlateDecode /Length 2629 /Subtype /Type1C >> stream Calculate the generation rate of electron-hole pairs immediately after reaching room temperature. In a I�$ Q��. Performance & security by Cloudflare, Please complete the security check to access. trailer For an intrinsic material, The conductivity of a semiconductor is proportional to the 0000003682 00000 n

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